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SIHLR120-GE3

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SIHLR120-GE3

MOSFET N-CH 100V 7.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIHLR120-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 7.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 270mOhm at 4.6A and 5V gate-source voltage (Vgs), it offers efficient power switching. The device boasts a maximum power dissipation of 42W (Tc) and 2.5W (Ta), with a junction-to-case thermal resistance suitable for effective thermal management. Key parameters include a gate charge (Qg) of 12 nC maximum at 5V and input capacitance (Ciss) of 490 pF maximum at 25V. The SIHLR120-GE3 is housed in a TO-252-3, DPAK surface-mount package, making it suitable for automated assembly processes. This MOSFET finds application in power supply units, motor control, and automotive systems. It operates within a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Rds On (Max) @ Id, Vgs270mOhm @ 4.6A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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