SIHL630STRL-GE3
MOSFET N-CH 200V 9A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHL630STRL-GE3 is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 400mOhm at 5.4A and 5V gate-source voltage (Vgs), it offers low conduction losses. The device supports a gate drive voltage range of 4V to 5V for optimal Rds On performance. Key parameters include a typical input capacitance (Ciss) of 1100pF at 25V and a gate charge (Qg) of 40nC at 10V. The SIHL630STRL-GE3 is packaged in a TO-263 (D2PAK) surface-mount configuration, suitable for demanding thermal management with a power dissipation of 74W (Tc). It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET finds application in power supply units, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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