SIHK100N65E-T1-GE3
E SERIES POWER MOSFET 650 V (D-Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix, a leading innovator in power semiconductors, presents the SIHK100N65E-T1-GE3, an E SERIES Power MOSFET designed for high-voltage applications. This N-channel MOSFET boasts a drain-source voltage (VDS) of 650V, making it suitable for demanding power conversion topologies. Engineered for efficiency and robust performance, the SIHK100N65E-T1-GE3 is commonly utilized in industrial power supplies, electric vehicle charging infrastructure, and renewable energy systems where reliable high-voltage switching is paramount. Its advanced silicon technology ensures excellent thermal management and low on-state resistance, contributing to overall system efficiency and longevity. Packaged in a Tape & Reel (TR) format for automated assembly, this component facilitates streamlined manufacturing processes.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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