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SIHH100N60E-T1-GE3

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SIHH100N60E-T1-GE3

MOSFET N-CH 600V 28A PPAK 8 X 8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 600 V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8

Additional Information

Series: ERoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 13.5A, 10V
FET Feature-
Power Dissipation (Max)174W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 100 V

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