SIHG73N60AEL-GE3
MOSFET N-CH 600V 69A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG73N60AEL-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component offers a robust 600V breakdown voltage (Vdss) and a continuous drain current capability of 69A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). Featuring a low on-resistance (Rds On) of 42mOhm at an Id of 36.5A and Vgs of 10V, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 342nC at 10V and input capacitance (Ciss) of 6709pF at 100V. Designed with a TO-247AC package for through-hole mounting, it operates reliably across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for power supply, industrial motor control, and renewable energy applications.
Additional Information
Series: ELRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 36.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 342 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6709 pF @ 100 V |
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