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SIHG47N60E-E3

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SIHG47N60E-E3

MOSFET N-CH 600V 47A TO247AC

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIHG47N60E-E3 is a 600V N-Channel Power MOSFET designed for high-performance applications. This device features a continuous drain current (Id) of 47A at 25°C and a maximum power dissipation of 357W (Tc). The on-resistance (Rds On) is specified at a maximum of 64mOhm at 24A and 10V gate drive. Key parameters include a Vgs(th) of 4V at 250µA and a gate charge (Qg) of 220 nC at 10V. Input capacitance (Ciss) is 9620 pF maximum at 100V. The MOSFET is housed in a TO-247AC package for through-hole mounting, with an operating temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power supply units, motor control, and industrial power applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs64mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)357W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9620 pF @ 100 V

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