SIHG47N60AEL-GE3
MOSFET N-CH 600V 47A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number SIHG47N60AEL-GE3, is a high-performance power MOSFET designed for demanding applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 47A at 25°C (Tc), with a maximum power dissipation of 379W (Tc). The N-Channel MOSFET, utilizing Metal Oxide technology, offers a low on-resistance (Rds On) of 65mOhm at 23.5A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 222 nC at 10V and input capacitance (Ciss) of 4600 pF at 100V. The SIHG47N60AEL-GE3 is housed in a TO-247-3 package with a TO-247AC supplier device package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is typically found in power supplies, motor control, and industrial automation.
Additional Information
Series: ELRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 23.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 379W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 222 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 100 V |
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