SIHG460B-GE3
MOSFET N-CH 500V 20A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG460B-GE3 is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 278W (Tc). The device exhibits a low on-resistance (Rds On) of 250mOhm maximum at 10A and 10V, and a gate charge (Qg) of 170nC maximum at 10V. It operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. The SIHG460B-GE3 utilizes MOSFET technology and is housed in a TO-247-3 package suitable for through-hole mounting. This component is commonly employed in industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3094 pF @ 100 V |
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