SIHG32N50D-GE3
MOSFET N-CH 500V 30A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG32N50D-GE3 is a N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 30A at 25°C (Tc). The low on-resistance (Rds On) of 150mOhm is achieved at 16A and 10V Vgs, with a maximum gate-source voltage of ±30V. Key parameters include a gate charge (Qg) of 96nC at 10V and input capacitance (Ciss) of 2550pF at 100V. The device offers a maximum power dissipation of 390W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a TO-247-3 (TO-247AC) through-hole configuration. This MOSFET is commonly utilized in industrial power supplies, server power, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 100 V |
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