SIHG25N40D-GE3
MOSFET N-CH 400V 25A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG25N40D-GE3 is a N-Channel Power MOSFET designed for high-performance applications. This component features a 400V drain-source voltage (Vdss) and a continuous drain current rating of 25A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 170mOhm maximum at 13A and 10V gate-source voltage. With a maximum power dissipation of 278W at the case temperature, it is suitable for demanding power conversion circuits. Key electrical parameters include a gate charge (Qg) of 88 nC maximum at 10V and an input capacitance (Ciss) of 1707 pF maximum at 100V. The SIHG25N40D-GE3 is packaged in a TO-247AC through-hole package, facilitating robust thermal management. This MOSFET is utilized in industrial and power supply applications requiring efficient switching and high voltage handling capabilities. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1707 pF @ 100 V |
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