SIHG25N40D-E3
MOSFET N-CH 400V 25A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG25N40D-E3 is a N-Channel Power MOSFET designed for high-voltage applications. This device features a 400 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 25 A at 25°C (Tc). The low on-resistance (Rds On) is 170 mOhm maximum at 13 A and 10 V gate drive, with a typical gate charge (Qg) of 88 nC at 10 V. With a maximum power dissipation of 278 W at 25°C (Tc), this MOSFET is suitable for demanding power conversion and switching applications found in industrial, automotive, and renewable energy sectors. The component is housed in a TO-247AC package for through-hole mounting and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1707 pF @ 100 V |
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