SIHG22N60S-E3
MOSFET N-CH 600V 22A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG22N60S-E3 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device offers a continuous drain current of 22A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). Key electrical parameters include a low on-resistance (Rds On) of 190mOhm at 11A and 10V, and a gate charge (Qg) of 110 nC at 10V. The input capacitance (Ciss) is 5620 pF at 25V. Packaged in a TO-247-3 (TO-247AC) through-hole configuration, this MOSFET is suitable for demanding industrial, automotive, and renewable energy systems requiring robust power handling and thermal performance. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5620 pF @ 25 V |
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