SIHG22N50D-GE3
MOSFET N-CH 500V 22A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG22N50D-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 22A at 25°C (Tc). Its low on-resistance (Rds On) is 230mOhm maximum at 11A and 10V gate drive. The device exhibits a maximum power dissipation of 312W (Tc) and a gate charge (Qg) of 98 nC at 10V. With an input capacitance (Ciss) of 1938 pF maximum at 100V, the SIHG22N50D-GE3 is suitable for power supply, industrial, and automotive applications requiring efficient switching and robust performance. It is offered in a TO-247AC through-hole package. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1938 pF @ 100 V |
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