SIHG22N50D-E3
MOSFET N-CH 500V 22A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG22N50D-E3 is a 500V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 22A (Tc) and a maximum power dissipation of 312W (Tc), making it suitable for demanding power supply designs, industrial motor control, and lighting applications. The TO-247AC package offers robust thermal performance with a low junction-to-case thermal resistance. Key electrical characteristics include a low on-resistance (Rds(on)) of 230mOhm at 11A, 10V, and a gate charge (Qg) of 98 nC at 10V. It supports a gate-source voltage range of ±30V and a threshold voltage (Vgs(th)) of 5V. The component operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1938 pF @ 100 V |
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