SIHG17N60D-GE3
MOSFET N-CH 600V 17A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG17N60D-GE3 is a 600V N-Channel Power MOSFET. This device features a continuous drain current of 17A (Tc) with a maximum power dissipation of 277.8W (Tc). The Rds(On) is specified at 340mOhm maximum at 8A and 10V. Key parameters include a Vgs(th) of 5V (max) at 250µA, gate charge (Qg) of 90 nC (max) at 10V, and input capacitance (Ciss) of 1780 pF (max) at 100V. The SIHG17N60D-GE3 is housed in a TO-247AC package, suitable for through-hole mounting. This component is often utilized in high-voltage power conversion applications across industries such as industrial automation, renewable energy, and consumer electronics. The operating junction temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 100 V |
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