SIHG17N60D-E3
MOSFET N-CH 600V 17A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHG17N60D-E3 is a discretely packaged N-Channel power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vds) rating of 600V and a continuous drain current (Id) of 17A at 25°C. The low on-resistance of 340mOhm at 8A and 10V gate drive, coupled with a maximum power dissipation of 277.8W at 25°C (Tc), makes it suitable for demanding power conversion circuits. Key characteristics include a gate charge (Qg) of 90nC at 10V and an input capacitance (Ciss) of 1780pF at 100V. The through-hole TO-247AC package ensures robust thermal management and ease of mounting. This MOSFET is utilized in industries such as industrial power supplies, renewable energy inverters, and electric vehicle charging systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277.8W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 100 V |
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