SIHG14N50D-E3
MOSFET N-CH 500V 14A TO247ACManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number SIHG14N50D-E3, offers a 500V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C. This through-hole component features a low on-resistance of 400mOhm maximum at 7A, 10V, and a maximum power dissipation of 208W. Key parameters include a gate charge of 58nC at 10V and input capacitance of 1144pF at 100V. The TO-247AC package is suitable for demanding applications. This device is utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1144 pF @ 100 V |
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