SIHFPS43N50K-GE3
MOSFET N-CH 500V SUPER-247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number SIHFPS43N50K-GE3, is a 500V device with a continuous drain current of 47A at 25°C (Tc) and a maximum power dissipation of 540W (Tc). This through-hole component, housed in a SUPER-247™ (TO-274AA) package, features a low on-resistance of 90mOhm at 28A and 10V. Key parameters include Vgs(th) of 5V (max) at 250µA and a gate charge of 350 nC at 10V. Input capacitance (Ciss) is rated at 8310 pF (max) at 25V. This MOSFET is suitable for applications in power supplies, industrial motor control, and electric vehicle charging. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8310 pF @ 25 V |
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