SIHFPS40N60K-GE3
POWER MOSFET SUPER-247, 130 M @Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHFPS40N60K-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc), with a maximum power dissipation of 570W (Tc). The device exhibits a low on-resistance (Rds On) of 130mOhm at 24A and 10V (Vgs). Key parameters include a gate charge (Qg) of 330 nC @ 10V and input capacitance (Ciss) of 7970 pF @ 25V. The operating temperature range is -55°C to 150°C (TJ). The TO-274AA package, also known as SUPER-247™, is utilized. This MOSFET is suitable for applications in power supplies, industrial motor control, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 570W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7970 pF @ 25 V |
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