SIHFPS40N50L-GE3
POWER MOSFET SUPER-247, 100 M @Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHFPS40N50L-GE3 is an N-channel Power MOSFET designed for demanding power applications. This component features a high drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 46A at 25°C (Tc), with a maximum power dissipation of 540W (Tc). The device exhibits a low on-resistance (Rds On) of 100mOhm at an Id of 28A and Vgs of 10V, facilitated by a gate drive voltage of 10V. Key capacitances include Ciss of 8110pF (Max) at 25V and Qg of 380nC (Max) at 10V. The SIHFPS40N50L-GE3 is housed in a SUPER-247™ (TO-274AA) package, suitable for through-hole mounting and operating within a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industrial and automotive sectors for power conversion and control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 25 V |
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