SIHFPS38N60L-GE3
POWER MOSFET SUPER-247, 150 M @Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHFPS38N60L-GE3 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a low Rds(on) of 150mOhm at 23A and 10V Vgs, contributing to reduced conduction losses. With a continuous drain current rating of 38A at 25°C and a maximum power dissipation of 540W (Tc), it is suitable for demanding power supply designs. Key parameters include a gate charge of 320 nC at 10V and input capacitance of 7990 pF at 25V. The device operates within a temperature range of -55°C to 150°C and is housed in a SUPER-247™ (TO-274AA) package. This MOSFET finds application in industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7990 pF @ 25 V |
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