SIHFB20N50K-E3
MOSFET N-CH 500V 20A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIHFB20N50K-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 20 A at 25°C, with a maximum power dissipation of 280 W (Tc). The on-resistance (Rds On) is specified at 250 mOhm maximum at 12 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 110 nC at 10 V and an input capacitance (Ciss) of 2870 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220AB package for through-hole mounting. This MOSFET is suitable for use in power supply, motor control, and industrial applications demanding robust high-voltage switching capabilities.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2870 pF @ 25 V |
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