SIHF8N50D-E3
MOSFET N-CH 500V 8.7A TO220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHF8N50D-E3, a N-Channel Power MOSFET, offers a drain-source voltage of 500V and a continuous drain current of 8.7A (Tc). This through-hole component in a TO-220 Full Pack package features a maximum on-resistance of 850mOhm at 4A and 10V. Key parameters include a gate charge of 30nC at 10V and input capacitance of 527pF at 100V. With a power dissipation of 33W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 100 V |
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