SIHF6N40D-E3
MOSFET N-CH 400V 6A TO220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number SIHF6N40D-E3. This through-hole device features a drain-source voltage of 400 V and a continuous drain current of 6 A at 25°C (Tc). With a maximum Rds(on) of 1 Ohm at 3 A and 10 V gate drive, it offers efficient switching. The N-Channel MOSFET technology provides a gate charge of 18 nC at 10 V and an input capacitance of 311 pF at 100 V. The device is rated for a continuous drain current of 6A and a power dissipation of 30W (Tc). The TO-220-3 Full Pack package ensures robust thermal performance. This component is suitable for applications in power supplies, industrial motor control, and lighting. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 311 pF @ 100 V |
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