SIHF18N50D-E3
MOSFET N-CH 500V 18A TO220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIHF18N50D-E3 is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 18A at 25°C. The on-resistance (Rds On) is specified at a maximum of 280mOhm at 9A and 10V gate drive. Key parameters include a gate charge (Qg) of 76 nC at 10V and input capacitance (Ciss) of 1500 pF at 100V. With a maximum power dissipation of 39W (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding environments. The device is housed in a TO-220-3 Full Pack package for through-hole mounting. Applications include power supplies, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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