SIHF18N50C-E3
MOSFET N-CH 500V 18A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHF18N50C-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This TO-220-3 packaged device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 18 A at 25°C (Tc). The on-resistance (Rds On) is specified as a maximum of 270 mOhm at 10 A and 10 V gate-source voltage. With a maximum power dissipation of 38 W (Tc), this MOSFET is suitable for power supply, motor control, and lighting applications. Key electrical parameters include a gate charge (Qg) of 76 nC at 10 V and input capacitance (Ciss) of 2942 pF at 25 V. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2942 pF @ 25 V |
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