SIHF12N50C-E3
MOSFET N-CH 500V 12A TO220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHF12N50C-E3 is a 500V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device offers a continuous drain current of 12A at 25°C (Tc) and a maximum power dissipation of 36W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 500V, a low on-resistance (Rds On) of 555mOhm maximum at 4A and 10V, and a gate charge (Qg) of 48 nC maximum at 10V. The input capacitance (Ciss) is 1375 pF maximum at 25V. This MOSFET utilizes MOSFET (Metal Oxide) technology and is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in demanding power supply units, industrial motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 555mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 25 V |
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