SIHF10N40D-E3
MOSFET N-CH 400V 10A TO220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHF10N40D-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a 400V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 33W (Tc), it is suitable for demanding power conversion and switching tasks. The device exhibits a typical Rds(on) of 600mOhm at 5A and 10V Vgs, with a gate charge (Qg) of 30 nC at 10V. Input capacitance (Ciss) is specified at 526 pF at 100V. The SIHF10N40D-E3 is packaged in a TO-220-3 Full Pack and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industrial power supplies, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 100 V |
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