SIHD5N50D-GE3
MOSFET N-CH 500V 5.3A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHD5N50D-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 5.3 A at 25°C. With a maximum Power Dissipation of 104 W (Tc), it offers excellent thermal management capabilities. The device exhibits a low on-resistance of 1.5 Ohm maximum at 2.5 A and 10 V Vgs. Key characteristics include a Gate Charge (Qg) of 20 nC maximum at 10 V and an Input Capacitance (Ciss) of 325 pF maximum at 100 V. The SIHD5N50D-GE3 is provided in a TO-252-3, DPAK surface-mount package, facilitating efficient board layout. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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