SIHD3N50DT4-GE3
MOSFET N-CH 500V 3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix D Series N-Channel Power MOSFET, part number SIHD3N50DT4-GE3, is a 500V, 3A continuous drain current device designed for demanding applications. This TO-252AA (DPAK) packaged MOSFET features a low Rds(on) of 3.2 Ohms maximum at 1.5A and 10V Vgs, with a gate charge of 12 nC at 10V. Its 69W maximum power dissipation at 25°C (Tc) and 175 pF input capacitance make it suitable for power factor correction, switch mode power supplies, and general-purpose power switching in industrial and automotive sectors. The device operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: DRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
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