SIHD3N50DT1-GE3
MOSFET N-CH 500V 3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHD3N50DT1-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a 500V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 3A (Tc), this component is suitable for power conversion and switching circuits. The device exhibits a maximum on-resistance (Rds(on)) of 3.2 Ohms at 1.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 12 nC (max) at 10V and input capacitance (Ciss) of 175 pF (max) at 100V. With a maximum power dissipation of 69W (Tc), it is packaged in a TO-252AA (DPAK) surface-mount configuration, supplied on tape and reel. This component finds utility in industrial power supplies, lighting, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
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