SIHD3N50D-GE3
MOSFET N-CH 500V 3A TO252AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHD3N50D-GE3 is a 500V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current (Id) of 3A at 25°C and a maximum power dissipation of 69W (Tc). With a low on-resistance (Rds On) of 3.2 Ohms at 2.5A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 175 pF at 100V. Packaged in a TO-252-3 DPAK surface-mount case, it is suitable for demanding environments with an operating temperature range of -55°C to 150°C. This MOSFET is utilized in industries such as industrial power supplies and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
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