SIHD3N50D-E3
MOSFET N-CH 500V 3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHD3N50D-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 3 A at 25°C. The device offers a maximum On-Resistance (Rds On) of 3.2 Ohms at 2.5 A and 10 V gate drive. With a maximum power dissipation of 69 W (Tc), it is suitable for demanding thermal environments. The SIHD3N50D-E3 utilizes Surface Mount technology, packaged in a TO-252AA (DPAK) case. Key electrical parameters include a Gate Charge (Qg) of 12 nC and input capacitance (Ciss) of 175 pF, both specified at 10 V and 100 V respectively. This MOSFET is utilized in power supply units, lighting control, and general-purpose high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
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