SIHD3N50D-BE3
MOSFET N-CH 500V 3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix D Series SIHD3N50D-BE3 is a 500V N-Channel Power MOSFET designed for high-performance applications. This surface mount device, housed in a TO-252AA (DPAK) package, offers a continuous drain current of 3A (Tc) and a maximum power dissipation of 69W (Tc) at 25°C. Key electrical parameters include a low on-resistance of 3.2 Ohms (Max) at 1.5A and 10V, with a gate charge of 12 nC (Max) at 10V. Input capacitance (Ciss) is a maximum of 175 pF at 100V. The device operates across a wide temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±30V. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: DRoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
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