SIHB8N50D-GE3
MOSFET N-CH 500V 8.7A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB8N50D-GE3 is a N-Channel Power MOSFET designed for high-voltage applications. This device features a Vds of 500 V and a continuous drain current (Id) of 8.7 A at 25°C (Tc). The Rds(on) is specified at a maximum of 850 mOhm at 4 A and 10 V gate drive. With a maximum power dissipation of 156 W (Tc), it is suitable for demanding power conversion and switching applications. The SIHB8N50D-GE3 utilizes MOSFET technology and is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Key electrical parameters include a gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 527 pF at 100 V. This component is commonly utilized in power supplies, industrial motor drives, and lighting control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 100 V |
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