SIHB6N80AE-GE3
E SERIES POWER MOSFET D2PAK (TO-Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 800 V 5A (Tc) 62.5W (Tc) Surface Mount TO-263 (D2PAK)
Additional Information
Series: ERoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 100 V |
Request a Quote
Clients Also Buy
QEDB501Q150J1GV001E
CAP CER 15PF 500V C0G/NP0 1111
QEDB501Q100J1GV001E
CAP CER 10PF 500V C0G/NP0 1111
QEDB501Q4R7B1GV001E
CAP CER 4.7PF 500V C0G/NP0 1111