SIHB30N60E-E3
MOSFET N-CH 600V 29A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB30N60E-E3 is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 600V drain-source breakdown voltage and a continuous drain current rating of 29A at 25°C (Tc). With a low on-resistance of 125mOhm maximum at 15A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 250W at 25°C (Tc).
Key electrical parameters include a gate charge (Qg) of 130 nC maximum at 10V and input capacitance (Ciss) of 2600 pF maximum at 100V. The SIHB30N60E-E3 utilizes a TO-263-3, D2PAK surface mount package for efficient thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 100 V |
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