SIHB30N60AEL-GE3
MOSFET N-CH 600V 28A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB30N60AEL-GE3 is a high-performance N-Channel Power MOSFET designed for demanding power conversion applications. This device features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 28A at 25°C (Tc). With a low on-resistance (Rds On) of 120mOhm at 15A and 10V, it minimizes conduction losses, contributing to higher efficiency. The MOSFET offers a maximum continuous power dissipation of 250W at 25°C (Tc) and is packaged in a TO-263 (D2PAK) surface-mount configuration, suitable for automated assembly. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 2565 pF at 100V, facilitating efficient switching. Operating temperature range is -55°C to 150°C (TJ). This component finds application in power supplies, inverters, and motor control systems across various industrial sectors.
Additional Information
Series: ELRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 100 V |
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