SIHB22N60S-GE3
MOSFET N-CH 600V 22A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB22N60S-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 22A at 25°C (Tc). The low on-resistance (Rds On) of 190mOhm at 11A and 10V gate drive voltage, coupled with a maximum power dissipation of 250W (Tc), makes it suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 2810 pF at 25V. The surface mount TO-263 (D2PAK) package ensures efficient thermal management. This component is utilized in sectors such as industrial power supplies and renewable energy systems.
Additional Information
Series: SRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |
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