SIHB22N60S-E3
MOSFET N-CH 600V 22A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-CH 600V 22A TO263, part number SIHB22N60S-E3. This N-Channel power MOSFET features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 22A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 190mOhm at 11A and 10V gate drive. With a power dissipation of 250W (Tc), it is housed in a surface mount TO-263 (D2PAK) package. Key parameters include a gate charge (Qg) of 110 nC @ 10V and input capacitance (Ciss) of 2810 pF @ 25V. This component is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |