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SIHB22N60S-E3

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SIHB22N60S-E3

MOSFET N-CH 600V 22A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-CH 600V 22A TO263, part number SIHB22N60S-E3. This N-Channel power MOSFET features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 22A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 190mOhm at 11A and 10V gate drive. With a power dissipation of 250W (Tc), it is housed in a surface mount TO-263 (D2PAK) package. Key parameters include a gate charge (Qg) of 110 nC @ 10V and input capacitance (Ciss) of 2810 pF @ 25V. This component is suitable for applications in power supplies, industrial motor control, and lighting.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2810 pF @ 25 V

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