SIHB22N60AEL-GE3
MOSFET N-CH 600V 21A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB22N60AEL-GE3 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a 600 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 21 A at 25°C (Tc), with a maximum power dissipation of 208 W (Tc). The low on-resistance of 180 mO at 11 A and 10 V gate drive makes it suitable for efficient power switching. Key parameters include a gate charge (Qg) of 82 nC at 10 V and input capacitance (Ciss) of 1757 pF at 100 V. The SIHB22N60AEL-GE3 is packaged in a TO-263-3, D2PAK surface-mount package, facilitating integration into compact power designs. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, industrial motor control, and renewable energy systems requiring robust high-voltage switching performance.
Additional Information
Series: ELRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1757 pF @ 100 V |
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