SIHB16N50C-E3
MOSFET N-CH 500V 16A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB16N50C-E3 is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) capability of 16 A at 25°C (Tc). With a maximum power dissipation of 250 W (Tc), it is suitable for demanding power management tasks. Key electrical characteristics include a low on-resistance (Rds On) of 380 mOhm at 8 A and 10 V, and a maximum gate charge (Qg) of 68 nC at 10 V. The input capacitance (Ciss) is rated at 1900 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ). Utilizing Surface Mount technology, it is provided in a TO-263 (D2PAK) package. This MOSFET is commonly found in power supplies, battery chargers, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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