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SIHB12N60ET1-GE3

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SIHB12N60ET1-GE3

MOSFET N-CH 600V 12A TO263

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 600 V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D2PAK)

Additional Information

Series: ERoHS Status: unknownManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)147W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds937 pF @ 100 V

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