SIHB12N50C-E3
MOSFET N-CH 500V 12A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB12N50C-E3 is a 500V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current capability of 12A at 25°C (Tc) and a maximum power dissipation of 208W (Tc). The low on-resistance of 555mOhm at 4A, 10V, coupled with a gate charge of 48nC (max) at 10V, contributes to optimized switching performance. With an input capacitance (Ciss) of 1375pF (max) at 25V and a gate-source voltage (Vgs) limit of ±30V, this MOSFET is suitable for demanding power conversion circuits. The SIHB12N50C-E3 utilizes surface mount technology, housed in a TO-263-3, D2PAK package, and is supplied on tape and reel. Its robust design makes it applicable in industrial power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 555mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 25 V |
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