SIHB10N40D-GE3
MOSFET N-CH 400V 10A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIHB10N40D-GE3 is a 400V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current capability of 10A at 25°C (Tc) and a maximum power dissipation of 147W (Tc). The Rds(On) is specified at 600mOhm maximum at 5A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC maximum at 10V and input capacitance (Ciss) of 526 pF maximum at 100V. The device is housed in a TO-263 (D2PAK) surface-mount package, suitable for robust thermal management in demanding environments. Its specifications make it well-suited for use in industrial power supplies, automotive electronics, and renewable energy systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 100 V |