SIHA30N60AEL-GE3
MOSFET N-CH 600V 28A TO220Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIHA30N60AEL-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 600V drain-source breakdown voltage and a continuous drain current capability of 28A at 25°C (Tc), with a maximum power dissipation of 39W (Tc). The low Rds(on) of 120mOhm at 15A and 10V gate drive voltage, coupled with a gate charge (Qg) of 120nC maximum at 10V, ensures efficient switching performance. Input capacitance (Ciss) is rated at 2565pF maximum at 100V. This MOSFET utilizes a through-hole mounting type in a TO-220-3 Full Pack package. The SIHA30N60AEL-GE3 is suitable for use in power supply, industrial motor control, and lighting applications. Operating temperature ranges from -55°C to 150°C (TJ) with a maximum gate-source voltage of ±30V.
Additional Information
Series: ELRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 100 V |
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