SIE882DF-T1-GE3
MOSFET N-CH 25V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE882DF-T1-GE3 is an N-Channel Power MOSFET engineered for demanding applications. This device features a 25 V drain-source voltage and offers a continuous drain current of 60 A at 25°C (Tc). The low on-resistance of 1.4 mOhm maximum at 20 A, 10 V gate drive ensures minimal power loss. Key parameters include a maximum gate charge (Qg) of 145 nC at 10 V and input capacitance (Ciss) of 6400 pF at 12.5 V. The SIE882DF-T1-GE3 is designed for surface mount installation within a 10-PolarPAK® (L) package and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 5.2 W (Ta) and 125 W (Tc). This component is suitable for power management, automotive, and industrial power conversion systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 12.5 V |
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