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SIE878DF-T1-GE3

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SIE878DF-T1-GE3

MOSFET N-CH 25V 45A 10POLARPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIE878DF-T1-GE3 TrenchFET® N-Channel Power MOSFET. This component features a 25V drain-source voltage and a continuous drain current of 45A at 25°C (Tc). With a low on-resistance of 5.2mOhm maximum at 20A and 10V, it offers efficient power handling. The device utilizes TrenchFET® technology for enhanced performance. Key parameters include a gate charge of 36 nC maximum at 10V and input capacitance of 1400 pF maximum at 12.5V. Power dissipation is rated at 5.2W (Ta) and 25W (Tc). The SIE878DF-T1-GE3 is supplied in a 10-PolarPAK® (L) surface mount package, delivered on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case10-PolarPAK® (L)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 12.5 V

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