SIE876DF-T1-GE3
MOSFET N-CH 60V 60A 10POLARPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIE876DF-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 60A at 25°C (Tc). The low on-resistance (Rds(on)) of 6.1mOhm at 20A and 10V gate drive ensures minimal conduction losses. With a maximum gate charge (Qg) of 77 nC at 10V, it offers efficient switching performance. The SIE876DF-T1-GE3 boasts a maximum power dissipation of 125W at 25°C (Tc), making it suitable for demanding thermal environments. Mounted in a surface-mount 10-PolarPAK® (L) package and supplied on tape and reel, this MOSFET is utilized in automotive, industrial power supplies, and power management systems. It operates across a junction temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | 10-PolarPAK® (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 30 V |