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SIE868DF-T1-GE3

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SIE868DF-T1-GE3

MOSFET N-CH 40V 60A 10POLARPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIE868DF-T1-GE3 is a 40V N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 2.3 mOhm at 20A and 10V Vgs, enabling minimal conduction losses. With a continuous drain current capability of 60A (Tc) and a maximum power dissipation of 125W (Tc), it is suitable for demanding power conversion tasks. The device offers a gate charge (Qg) of 145 nC at 10V and an input capacitance (Ciss) of 6100 pF at 20V. Mounting is facilitated by its 10-PolarPAK® (L) surface-mount package, supplied on tape and reel. Operating temperature ranges from -55°C to 150°C (TJ). Typical applications include power supplies, automotive electronics, and industrial motor control.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case10-PolarPAK® (L)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs2.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 20 V

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